In GaN technology, thermal design is as important as electrical design

The development of power amplifier technology always revolves around improving the RF power density and gain of transistors while maintaining or increasing their speed. Enhancing these parameters helps reduce gain progression and associated losses, which in turn limits the maximum power, gain, and efficiency a chip can deliver at a given frequency.

As power density continues to rise, the industry has transitioned from silicon-based technologies to standard gallium arsenide (GaAs), then to high-pressure GaAs, and finally to gallium nitride (GaN). This shift reflects the need for higher performance in RF applications, especially as demands for more power and efficiency grow.

With the move toward high-power density FET technologies, managing heat has become a critical challenge. Keeping devices cool is essential because excessive heat can degrade both performance and reliability. In theory, GaN can achieve power densities above 20 W/mm at high frequencies. However, in practice, its use is often limited to 5 W/mm or less due to the intense heat generated in such a small area.

Thermal management has made silicon carbide (SiC) the preferred substrate for high-performance RF applications. SiC offers excellent thermal conductivity, which complements GaN’s high RF power capabilities. Because of this, companies like Qorvo are exploring even better thermal materials, such as diamond, to further improve heat dissipation and device performance.

Managing thermal challenges today requires more than just chip-level design. Circuit designers often spread heat across the semiconductor surface by increasing the spacing between device cells or reducing their size. However, thermal management isn’t just about the chip—it also involves package engineering. High heat flux at the chip-package interface means that a reliable thermal interface is crucial for maximizing GaN’s RF power output.

In GaN technology, thermal design is just as important as electrical design. Proper thermal management ensures that the device operates efficiently and reliably under high power conditions. Without it, even the best electrical design cannot fully realize the potential of GaN.

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