Diodes has launched a new line of high-performance MOSFETs packaged in the ultra-compact DFN1006-3 format. This small package occupies just 0.6 mm² on the PCB, saving over 50% of the space compared to similar SOT723 devices. It features a junction-to-ambient thermal resistance (RθJA) of 256°C/W and operates at only 1.3W under continuous load—half the power consumption of comparable products.
Thanks to its low operating temperature, compact size, and a board height of just 0.4mm, this MOSFET is perfect for ultra-thin consumer electronics such as tablets and smartphones. Diodes is the first to offer both N-channel and P-channel MOSFETs rated at 20V, 30V, and 60V, making them ideal for reliable load switching, signal routing, and boost conversion applications.
For example, the DMN2300UFB4 N-channel MOSFET, rated at 20V, delivers an on-resistance of just 150mΩ—more than half the cost of competing solutions. This helps reduce conduction losses and heat dissipation significantly. The corresponding P-channel version offers similar performance and is rated for 2kV and 3kV ESD protection, respectively.
Explore more about these advanced components and their applications by visiting our official website or contacting our technical support team for detailed specifications and design assistance.
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