International Rectifier (IR), a global leader in power semiconductors and energy management solutions, has expanded its lineup of 40V to 100V automotive MOSFETs, including logic-level device families. These new MOSFETs are designed for demanding applications across traditional internal combustion engine (ICE) platforms, as well as micro-hybrid and full hybrid systems.
The newly optimized automotive MOSFET family delivers on-resistance (RDS(on)) as low as 8 mΩ at 55V, offering improved efficiency and performance. Logic-level MOSFETs simplify gate drive requirements, helping to reduce board space and component count while maintaining high reliability.
Pan Dawei, Vice President of Sales for IR Asia Pacific, stated, “Our expanded automotive MOSFET portfolio, including logic-level devices, gives customers more flexibility in terms of voltage, package options, and functionality to meet their specific design needs. IR’s proven silicon technology continues to be trusted by our customers.â€
These MOSFETs are developed using IR’s advanced AU Gen 10.2 trench technology, ensuring high performance and reliability. All automotive MOSFET products adhere to the zero-defect quality concept, featuring dynamic and static device averaging, along with 100% automated wafer-level visual inspection.
According to the AEC-Q101 standard, the on-resistance variation should not exceed 20% after 10,000 temperature cycles. However, IR’s new AU material demonstrates superior stability, with an on-resistance change of only 12% over 5,000 cycles. This highlights the exceptional strength and durability of the material.
In addition, the new devices are AEC-Q101 compliant and made from environmentally friendly materials that are both lead-free and RoHS-compliant, meeting the highest industry standards for safety and sustainability.
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