Diodes Introduces High Performance MOSFETs in Ultra Small Packages

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Diodes has launched a new line of high-performance MOSFETs in the ultra-compact DFN1006-3 package. This tiny package only takes up 0.6 mm² of PCB space, saving over 50% compared to similar SOT723 devices. With a junction-to-ambient thermal resistance (RθJA) of 256°C/W and a continuous power consumption of just 1.3W, these MOSFETs offer significantly lower power usage than similar products—nearly half the power consumption of competing solutions.

The reduced operating temperature, compact size, and a board height of only 0.4mm make these MOSFETs ideal for ultra-thin portable consumer electronics such as tablets and smartphones. Diodes is the first to introduce N-channel and P-channel MOSFETs rated at 20V, 30V, and 60V, offering versatile performance for reliable load switching, signal routing, and boost conversion applications.

For example, the DMN2300UFB4 N-channel MOSFET with a nominal voltage of 20V features an on-resistance of just 150mΩ—more than half the cost of competitive alternatives. This helps reduce conduction losses and power dissipation significantly. The P-channel version, DMN2300UFB4, delivers comparable performance. Both devices have impressive ESD ratings of 2kV and 3kV, respectively, ensuring robust protection in demanding environments.

Whether you're designing next-generation mobile devices or optimizing space in compact systems, these MOSFETs provide a powerful and efficient solution. For more details about the product line, visit our official website today.